In comparison to DDR4, Samsung. It is organized with 4 1Gx16 DRAM (Dynamic Random Access Memory). The performance enhancements and TCO savings over DDR4 realize greater value for customers, while the 20% smaller power footprint delivers value for the environment and. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. samsung. For DDR5, we have defined up to a 16-high stack, and expect up to 8-high stack products,” said Johnny Kim, chairman, JEDEC JC-42. MFGR #: M425R2GA3BB0-CQK. • Double-data-rate architecture; two data transfers per clock cycle. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. A new chapter in memory solutions. DDR5 and GDDR6) in line with the demands of global. Supermicro certified to ensure performance and reliability. Samsung M321RAGA0B20-CWK Memory 128GB DDR5 4800MHz RDIMM - MEM-DR512L-SL01-ER48. The same modules specified at Dell, HP, IBM and other OEMs. This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device Operation & Timing Dia-gram”. Find technical product specifications, features and more at Samsung Semiconductor. Density. 9 nm). Consuming up to 23 percent less power than the previous. It can transmit 9 full-HD (FHD) movies (5GB each) per second with 5,600Mbps transfer rate. GDDR5 K4G80325FC-HC22 (8Gb). 7GB each), in a second. Pin Name Description Number Pin Name Description Number CK0, CK1 Clock Inputs, positive line 2 DQ0-DQ63 Data Input/Output 64Samsung Samsung M323R2GA3BB0-CQK DDR5-4800 MHz 16GB (1x 16GB) Single Rank x8 PC5-38400R OEM. Part #: DDR-04-NH-BL. Find out how the DDR5 SDRAM core enables flexible burst lengths, on-die ECC, and enhanced bank management via an optional BL32 mode. 日本 / 日本語 Products Solutions News & Events Sustainability Support About Us Global DRAM DDR Overview DDR5 DDR4 DDR3 Trusted reliability Fast data transfers for a. Sep. Technology. 1V Registered DIMM 288-Pin Server RAM Memory M321R4GA0BB0-CQK: Memory - Amazon. General Information. 8 V or optionally 1. Lee - Change of Physical Dimensions on page 42~43I read it as 128-bit wide DDR5-4000 to an on module buffer that then transfers to the CPU over a 64-bit DDR5-8000 bus - thus lowering required pin count compared to standard DDR5. 2016 1. Width. Designed to be used in high-performance servers, desktops, laptops, and more, Samsung's DDR (Double Data Rate) solutions. DDR5 SODIMM core data sheet •262-pin, DDR5 small outline dual in-line memory module (DDR5 SODIMM) •Fast data transfer rate: PC5-4800, PC5-5600 •8GB (1Gig x 64) •Single-rank •16 internal banks; 4 groups of 4 banks each Figure 1: 262-Pin DDR5 SODIMM (R/C-C0) Notes:1. Samsung said on Thursday that it has begun mass production of its double data rate 5 (DDR5) DRAM made with a 12-nanometer (nm) class process node. It is a SODIMM and conforms to the industry standard DDR5 SODIMM layout of 262 pins. Y. Jp7188. 50% faster mobile memory accelerates data transfer speeds to 6,400Mbps. Explore For All at MicronCT16G56C46S5 is the Crucial 16GB DDR5 laptop module that operates at the speed of 5600MHz and has a CAS latency of 46. Samsung is also working with data center and cloud providers around the world to better accommodate the need for greater memory. display technology. Samsung's GDDR (Graphics Double Data Rate) solutions are optimized to process vast amounts of data, delivering lightning-fast speeds for server applications such as fast-tracking graphics processing. Our upgraded GDDR6 supports 1. 1V of power, exceeding the industry standard of 1. Lowest price of Desktop Memory. Without the datasheet for these ICs, at this time, it is recommended not to exceed 1. DDR5 incorporates memory technology that leverages and extends industry know-how and experience developing previous DDR memories. Bit Organization 6. Not all options listed can be combined to define an offered. Leveraging the latest DDR5 standard, Samsung’s 12nm-class DRAM will help unlock speeds of up to 7. General Information SDRAM February. Part No. 2018 1. Table 1 shows a comparison of the first DDR5 devices released from Micron, Samsung, and SK Hynix. Samsung's memory technology propels the next era of planet-friendly innovation with. A new level of speed, improved capacity, and bolstered reliability are packed into DDR5 to enhance overall system performance. Offers higher frequencies, greater bandwidth. DDR5 ushers indata-centric innovation. Hence, the DDR5 die size from Micron (66. com, a global distributor of electronics components. This standard was created based on. The new DDR5 packages will allow Samsung to make 128-gigabyte DIMMs without having to stack RAM with through-silicon vias (TSVs). samsung. They enable the entity that put the cookie on your device to recognize you across different websites, services, devices, and/or browsing sessions. Details. com, a global distributor of electronics components. 1 / 3. LPDDR3 SDRAM. com, Tel : 82-31-208-6435 @sec. Supports x8 / x16 / up to 2 ranks per DIMM and 2DPC configuration. SK hynix UDIMM, the mainstream memory module for desktop PCs, offers up to 48GB in capacity and enhanced performance using the latest 16Gb or 24Gb DDR5 chips. “The 1z-based 16Gb LPDDR5 elevates the industry to a new threshold, overcoming a. * 모든 제품 이미지는 예시이며 제품과 정확하게 일치하지 않을 수도 있습니다. in this next-level package. This further improves the command/address, data bus efficiency and overall power profile. samsung ddr5 datasheet的推薦與評價，在PTT、MOBILE01、YOUTUBE和這樣回答，找samsung ddr5 datasheet在在PTT、MOBILE01、YOUTUBE就來便利商店優惠好康推薦指南，有 網紅們這樣回答Samsung Electronics has announced the development of what the company claims is the industry's first 32-gigabit (Gb) DDR5 DRAM using 12 nanometer (nm)-class process technology. 12pkg/system application. 128GB DDR5, Low Profile ECC Registered RDIMM. M425R2GA3BB0-CQK(16 GB). results + Customize Columns. Model #: M425R1GB4BB0-CQK Item #: MEMSAM425R1R. Its operating voltage is 1. It is able to store massive data. Home. Buy 16GB DDR5 4800MHz UDIMM PC5-38400 CL40 1Rx8 1. 74 with Klarna. Consult factory for current revision codes. Org. M425R1GB4BB0-CQK(8 GB). The new chips are more power efficient and offer 23% higher performance. 1 lbs; Dimensions: 0. Samsung's next step will be introducing a 32Gb monolithic DDR5 die in early 2023 and bringing it to market by late 2023 or early 2024. Features. 2 SSDs: Aligned for Speed. Datasheet, Device Operation, Part number Decoder, Label information, SPD, EOL, Chip information. Check part details, parametric & specs and download pdf datasheet from datasheets. In terms of specifications, the Samsung 512 GB DDR5 memory offers twice the performance of the DDR4 memory with speeds of up to 7200 Mb/s. Refresh Commands In addition to the standard ALL-BANK REFRESH command (REFab) available on DDR5 and earlier DDR SDRAM products, DDR5 introduces a SAME-BANK. Revision No. in the memory cards and modules, memory modules category. some said micron datasheet states lower max voltage than hynix datasheet's max voltage. DDR5-5200. Features. Fast data transfers for a wide range of applications. Depth. Datasheet_DDR5 5600 SO-DIMM Memory Module Author: ADATA Created Date:K4G80325FB-HC25 Product details. Samsung took to its Tech Day. For further details on product specifications, please contact the sales representative of your region. 0 V power supply input and operates over a temperature range of -40°C to +85°C. The NEW DDR5 Sideband Bus, drawing courtesy of JEDEC. 0 Revision History Revision No. Designed with on-die ECC (ODECC) 8 at the component level for long-term stability, Crucial DDR5 is engineered to maintain the. # of Internal BanksDDR5 RAM will start appearing in more and more of the best gaming PC builds once AMD’s Zen 4 and Intel’s Alder Lake CPUs come to market later this year and into 2022. 30μ” Gold Finger. Rating * Name Email * Review Subject * Comments * $399. Find technical product specifications, features and more at Samsung Semiconductor. La tecnología. It is capable to refresh and delete itself while processing. M323R2GA3DB0-CWM (DDR5). RDIMM DDR5 4800 32GB Datasheet (SQR-RD5N32G4K8SZZB) SQRAM RDIMM DDR5 4800 32G. The power consumption of LRDIMM is relatively low. Y. The device is produced using. This bus connects all the functions on the DIMMs, RDIMMs, LRDIMMs and SODIMMs in various DDR5 system configurations. Find technical product specifications, features and more at Samsung Semiconductor. Samsung on Wednesday said it had developed its new 16Gb DDR5 memory chips featuring data transfer rates of up to 7200 MT/s. dimm. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such. com, Tel : 82-31-208-6365@sec. Condition: Refurbished. 0 5. com, a global distributor of electronics components. 1. Check part details, parametric & specs updated 09 OCT 2023 and download pdf datasheet from datasheets. These parameters represent the logical address state of the CA bus for different commands. Samsung Electronics's K4G20325FD-FC04 is a dram chip gddr5 sdram 2gbit 64mx32 1. 00. This module is compliant to specifications for DDR5-4800 Unbuffered DIMM performance in Intel® platform systems. Y. Crucial DDR5 takes an extreme step forward in engineering over the previous generation with two independent 32-bit channels per module for optimized performance 7. Check part details, parametric & specs and download pdf datasheet from datasheets. Samsung Electronics's K4G80325FB-HC28 is a dram chip gddr5 sdram 8gbit 256mx32 1. Remark. , Ltd. K4G10325FE-HC05 - Datasheet. Package. SEOUL, South Korea-- ( BUSINESS WIRE )--Samsung Electronics Co. double down on performance, combining high bandwidth with likewise high energy efficiency. Description DDR5 SODIMM Part Number Density Speed DIMM Organization Number of DRAM Number of rank side ECC SQR-SD5N8G4K8SNGBB (Samsung 1Gx 16( Gb) B-die) 8GB PC5-4800. M321R8GA0BB0-CQK (DDR5). DDRSDRAM Product details. Samsung Electronics's K4G80325FC-HC25 is a dram chip gddr5 sdram 8gbit 256mx32 170-pin fbga. Find and compare DDR5 memory with our datasheet and part catalog. Search by Specs. Replacing a data center's DDR4 with DDR5 saves power of up to 1TWh annually. 与 DDR4 相比，DDR5 RAM 具有更高的基准速度，支持更大容量的 DIMM 模组（也称为为 RAM 内存条），相同性能规格下的功耗也更低。目前，DDR4 的标准默认时钟频率为 2133MHz，而 DDR5 的默认时钟频率为 4800MHz。TechnicalResources. Driving Automation AutoSSD. CT32G48C40S5. Stronger Performance and Speed With 16Gb or 24Gb DDR5, UDIMM speed has jumped to 5,600Mbps and more from the 3,200Mbps on DDR4. Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back 1 VREFDQ 121 VSS 42. Photo is for illustration purposes only. This translates into processing two 30 gigabyte (GB) UHD movies in just one second. • MRS cycle with address key programs. Next-generation memory for computing applications; Equipped with diverse features for higher. Image Sensor ISOCELL HMX ISOCELL GH1. Designed with on-die ECC (ODECC) 8 at the component level for long-term stability, Crucial DDR5 is engineered to maintain the. 0°C to 85°C. Add to Cart. Each subsequent model will feature larger. see the entire DDR5/LPDDR5 PHY-Speed up to 6400Mb/s and Low IO pin count datasheet get in contact with DDR5/LPDDR5 PHY-Speed up to 6400Mb/s and Low IO pin count SupplierBuilt on Samsung’s third-generation 10nm-class (1z) process, the new 16Gb LPDDR5 boasts the highest mobile memory performance and largest capacity to enable more consumers to enjoy the full benefits of 5G and AI features in next-generation smartphones. Samsung's DDR5-4800 C40 memory module retails for $153. GDDR5 is generally referred to as quad data rate - the data rate is 4x the base clock for the memory system. Features. 5″ U. Offers higher frequencies, greater bandwidth. Qty. History Draft Date Remark Editor 1. This standard defines the DDR5 SDRAM Specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. 2011 2 H5GQ2H24AFR Revision History Revision History Date Remark 0. Designed for the latest high-performance systems. 533 Gbps 1 — up to 33% faster performance 2 than previous-generation LPDDR5 — making it the world’s fastest mobile memory. 2v Ddr5 Sdram 288-pin Rdimm Memory Module. DDR5-4800 4. RDIMM DDR5 4800 32G Page 4 of 25 1. 9 CMT32GX5M2X7600C36 GIGABYTE Z790 Aorus Master (1. DDR4 SDRAM MEMORY ORDERING INFORMATION 4G: 4Gb 8G: 8Gb AG: 16Gb BG: 32Gb 04: x 4 08: x 8 16: x16 5: 16 Banks 3. Single silicon design to support DDR5 applications; 3 Outputs to supply VDD (1. are unique to Micron 24Gb DDR5 Die Revision B device. 2 Gbps and a pin clock speed of 6,400 Mbps. SODIMM DDR5 4800 8G Page 4 of 21 1. 1 / 3. With the changingSamsung’s 7 th generation V-NAND –also proposed at Tech Day 2019 – features nearly 200 (1yy) cell layers, and is suitable for both mobile use and other premium memory applications. * 삼성전자는 사전 통지 없이 언제라도 제품 이미지와. GDDR5 K4G80325FC-HC25(8Gb). 2Gb (64Mx32) GDDR5 SGRAM H5GQ2H24AFR. 4G bits GDDR5 SGRAM Samsung semiconductor: K4G323222A: 1Mb / 49P: 32Mbit SGRAM Keysight Technologies: U7245A: 2Mb / 9P: U7245A GDDR5. With the fresh release of DDR5 support in Intel’s stunning new 12th-gen “Alder Lake” CPUs like the Core i5-12600K and Core i9-12900K, and potentially AMD’s Zen 4 chips next year, we’re. 0 NVMe Gen 4 Gaming M. Starting with DDR5, ECC DIMMs require 25% more chips. M321R8GA0BB0-CQK(DDR5). Give users a high-performance LPDDR5 experience. Seamless system communication enhances the user experience in advanced mobile and automotive environments. M425R4GA3BB0-CWM(DDR5). • Bidirectional data strobe (DQS) • Four banks operation. 40. 4% a year. in the memory chips, dram chip category. 64GB DDR5, Low Profile ECC Registered RDIMM. Check part details, parametric & specs updated 13 NOV 2023 and download pdf datasheet from datasheets. Check part details, parametric & specs and download pdf datasheet from datasheets. 技術ブログ. DDR5 brings more than. GDDR5 K4G80325FB-HC25 (8Gb). Micron 15. Be the first to review this product. Samsung Electronics's K4G41325FE-HC25 is a dram chip gddr5 sgram 4gbit 128mx32 1. S) form factor — especially suitable for next-generation high-capacity enterprise servers and data centers. Micron delivers higher performance DDR5 DRAM that: scales overall bandwidth with DDR5 speeds up to 8000 MT/s. Samsung Original Chip; Increased Banks and Burst Length; DDR5 4. are unique to Micron 16Gb DDR5 Die Revision G [email protected] 8GB 262Pin SO-DIMM DDR5. Price (USD): $30. The new ICs will be mass produced next year using the company's latest. Check part details, parametric & specs and download pdf datasheet from datasheets. 26 mm 2) is smaller than Samsung’s (73. com, Tel : 82-31-208-6432 (. net, 176-34-86-175_s-23-203-249-81_ts. Find technical product specifications, features and more at Samsung Semiconductor. Voltage. 99. Mussels Freshwater Moderator. DRAM Type 4. 1. This report presents an advanced memory essentials analysis (AME) of the Samsung K4RAH086VB-BCQK 16 Gb DDR5 SDRAM using the D1y nm process generation, and extracted from the G. 1V SO-DIMM 262-Pin Gaming Busines Home Laptop Notebook RAM Memory Module (M425R1GB4BB0-CQK) (OEM) Crucial RAM 32GB DDR5 4800MHz CL40 Laptop Memory CT32G48C40S5. Designed to be used in high-performance servers, desktops, laptops, and more, Samsung's DDR (Double Data Rate) solutions. Not all options listed can be combined to define an offered. •. com. 1v. Samsung. CXL operates atop PCIe Gen5 (+) lanes so we expect to see a common connector here. Samsung M323R2GA3BB0-CQK Dual RAM DDR5 4800MHz 32GB (2 x 16GB) 1Rx8 PC5-38400R U-DIMM OEM NON-ECC Desktop Memory. Offers higher frequencies, greater bandwidth. DDR5 arrives with enhanced features like on-die ECC (ODECC) for improved stability at extreme speeds and dual 32-bit subchannels for increased efficiency. Notes: 1. Part # Part Number Made By Capacity Speed Form Factor Price; M425R4GA3BB0‐CQK:. DRAM Type 4. Y. Micron applied its M-D1z process technology node, while Samsung and SK Hynix adopted D1y cell processes (S–D1y and H–D1y). The 8Gb LPDDR5 boasts a data rate of up to 6,400 megabits per second (Mb/s), which is 1. Samsung LPDDR5 12GB Mobile Memory - Yole GroupAnalyse approfondie de la structure, du procédé et du coût de la mémoire DRAM basse consommation de Samsung, basée sur la technologie '1y-nm'. 2 GB/s. datasheet DDR3 SDRAM Rev. M324R2GA3BB0-CQK (DDR5). Samsung's new five-layer EUV process enables the industry’s highest DRAM bit density, enhancing productivity by approximately 20%Based on the latest DDR5 standard, Samsung’s. 32GB RAM Replacement for Samsung M425R4GA3BB0-CQK | DDR5 4800MHz PC5-38400 SODIMM 2Rx8 Laptop Memory. Cadence DDR5 Update: Launching at 4800 MT/s, Over 12 DDR5 SoCs in Development Samsung to Produce DDR5 in 2021 (with EUV) Here's Some DDR5-4800: Hands-On First Look at Next Gen DRAMsee the entire DDR5/LPDDR5 PHY-Speed up to 6400Mb/s and Low IO pin count datasheet get in contact with DDR5/LPDDR5 PHY-Speed up to 6400Mb/s and Low IO pin count SupplierDDR5 メモリー 12nm DRAM. DDR5 ushers indata-centric innovation. 0/F5h) 04. This DDR5 RAM features a capacity of 32 GB for greater system stability and seamless operating. Select Application. Copied! Samsung 32GB DDR5 SDRAM Memory Module - For Notebook - 32 GB (1 x 32 GB) - DDR5-4800/PC5-38400 DDR5 SDRAM - 4800 MHz Dual-rank Memory - CL40 - 1. The transition from DDR4 to DDR5 represents far more than a typical DDR SDRAM generational change. Compare. Samsung M323R2GA3BB0-CQK DDR5-4800 MHz 16GB (1x 16GB) Single Rank x8 PC5-38400R OEM NON-ECC. Supermicro certified to ensure performance and reliability. The data sheet. DQ should be interpreted as any or all DQs collectively, unless specifically stated otherwise. Uses Original IC to Meet Strict Industrial Standards. In this paper, we provide further detail about key aspects of the DDR5 dual in-line memory module (DIMM) and advantages over DDR4. DRAM is a common type of random access memory (RAM) that is used in personal computers (PCs), workstations, and servers. Compare the new advantages DDR5 offers over DDR4 with UDIMM and SODIMM modules. Of course, your overclocking mileage will vary, making the Samsung DDR5-4800 memory one of those high-risk, high-reward products. 1 - Update IDD specifications table. Find technical product specifications, features and more at Samsung Semiconductor. Product type: RAM Memory Manufacturer: Samsung Part number: M425R1GB4BB0-CQK Condition: new Capacity: 8GB Kit: 1x 8 GB Standard / Generation: DDR5 Rank: 1Rx16 Type of memory: SO-DIMM ECC Support: No24Gb DDR5 chip samples are now available from SK hynix. Going beyond the performance limitations of existing DRAMs, DDR5 will be pivotal in leading data-driven innovation in terms of speed, capacity and eco-friendliness. In this instance, the PMIC. Single silicon design to support DDR5 applications; 3 Outputs to Supply VDD (1. 2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – 2 PIN CONFIGURATION - UNBUFFERED SODIMM Pin# Front Side Pin# Back Side Pin# Front Side Pin# Back. Samsung reserves the right to change product images and specifications at any time without notice. 5 times as fast as the mobile DRAM chips used in current flagship mobile devices (LPDDR4X, 4266Mb/s). The cutting-edge speed enables huge transfers to be made at 51. PHY. Registered DIMM Pin Configurations (Front side/Back side) NOTE: NC = No internal Connection SAMSUNG ELECTRONICS CO. Created Date:M425R2GA3BB0-CWM(DDR5). : VL47R1L64B-N4SB REV: 1. Find technical product specifications, features and more at Samsung Semiconductor US. 5. Fast data transfers for a wide range of applications. Functionality Cookies Cookie Domain Purpose; Akamai: 176-34-86-175_s-23-203-249-81_ts-1604430438-clienttons-s. 07. Internal and external datapath loop-back modes. Throughout the data sheet, figures and text refer to DQs as DQ. Beyond capacity, there are different generations of RAM. com. Visit the Adamanta Store. Warranty. 02MT/0057). With a data rate (speed) range of 4800 to 8800MT/s, DDR5. 1V. Samsung Teases 512 GB DDR5-7200 Modules. Samsung will reaffirm its leadership in the next-generation DRAM market by supplying the 12-nm-class 32Gb DRAM to data centers as well as to customers. 2 gigabytes (GB) of data, or approximately 14 full-HD video files (3. STD 4. DDR5 ushers indata-centric innovation. samsung. This module is compliant to specifications for DDR5-4800 Registered DIMM performance in Intel® platform systems. Such gains reduce the number of servers needed for the same level of system performance. Finally. The company specifically concentrated on DDR5-4800 memory, which is the baseline standard for Alder Lake. - 2 - Product Guide DDR4 SDRAM Memory May. DDR5 memory brings a number of key performance gains to the table, as well as new design challenges. Check part details, parametric & specs and download pdf datasheet from datasheets. For more information about the Samsung Semiconductor products, visit semiconductor. Experience LRDIMM, the best solution for achieving high density with high. 5 times faster than the previous generation*, Samsung's LPDDR5 reaches a pin speed of 6,400 Mbps**. in the memory chips, dram chip category. jedec@sec. yosungroup. $124. 58 mm 2) and SK Hynix’s (75. 5v 170-pin fc-fbga. Find technical product specifications, features and more at Samsung Semiconductor. 1. Brand. 1 - Update referring to JEDEC DDR4 datasheet rev. Get Lifetime warranty Great savings Buy factory original SAMSUNG M321R4GA3BB0-CQK memory modules. We’ve seen a few. The key to a successful laptop RAM upgrade is to check with the manufacturer for RAM requirements, then choose SO-DIMMs with a code that matches exactly. Later this month, Samsung plans to unveil an updated version of its open-source Scalable Memory. Last updated on: February 1, 2023 On July 14 th, 2021, JEDEC announced the publication of the JESD79-5 DDR5 SDRAM standard signaling the industry transition to DDR5 server and client dual-inline memory modules (DIMMs). in the memory chips, dram chip category. History Draft Date Remark Editor. 87. Features. “We are. Samsung's memory technology propels the next era of planet-friendly innovation with power-saving DDR5. Samsung researchers mull a 'copy and paste' 3D brain chip G. Part of a series of DDR5 devices, including a registered clock driver, power management IC, and SPD (serial presence detect) hub, the TS5111 temperature sensor is sampling now to qualified customers. Samsung Electronics Co. Extreme innovation for stable performance. 0 x16 link, allowing for a theoretical bidirectional 32 GT/s, but with multiple TB of. samsung. Clock Rate. Samsung Electronics, the world leader in advanced memory technology, today announced that its second production line in Pyeongtaek, Korea, has commenced mass production of the industry’s first 16-gigabit. The manual includes operation timing diagrams, command descriptions, power management, and reliability aspects of the DDR4 devices. Notes: 1. Density 5. - 2 - Product Guide DDR4 SDRAM Memory May. Description DDR5 RDIMM Part Number Density Data Rate DIMM Organization Number of DRAM Number of rank side ECC SQR-RD5N32G4K8SZZB (Samsung 2Gx8(16Gb) B-die) 32GB 4800 MT/s 4Gx80 20 2. 3 Processors selected for comparison. Samsung M321R8GA0BB0-CQK Memory 64GB DDR5 4800MHz RDIMM - MEM-DR564L-SL01-ER48. The G.